Group Leader

profile_image
Dr. Kamal Asadi
Group Leader
Phone:+49 6131 379-126
Email:asadi@...

Publications and Patents

Google Scholar

News

Chengcheng Yan, from Karrlsruhe Institue of Technoogy has joined our team to do her master research thesis.

Welcome Chengcheng!

Hamed Received the best poster award at the ICOE-2017 in Saint Petersburg, Russia.

Congeratulations Hamed!

Kamal Asadi is now a member of the editorial board of Scientific Reports, an open access journal launched by publisher of Nature series.

Our Collaborative work with Delft University of Technology on "thin-film thermistors" based on phase-separated blends of ferroelectric and semicoducting polymers is now published in Applied Physics Letters.

Manasvi Kumar has just joined our team as a new PhD strudnet. 

Welcome Manasvi!

Our review on ferroelectric metal organic framework in now online. The manuscript, published in the European Journall of Inorganic Chemistry, discusses recent development in the field of MOFs. 

Our collaborative work with Technical University of Delft and Holst Center on stability of intermediate polarization states in ferroelectrics memories for multi-bit data storage is now published in Applied Physics Letters.

Saleem Anwar has just joined our team as a new PhD strudnet. 

Welcome Saleem!

The manuscript on nano-structured ferroelectric memory diodes is now accepted in Advanced Functional Materials.

Our manuscript on AC-electroluminescent of MOF-5 diodes is now accepted in Journal of Physical Chemistry C We show that the electroluminescence is due to solvent induced galvanoluminescence of the Al electrode.

Anielen Halda Ribeiro joined our group. She is working on her MSc. research project.

Welcome Anielen!

The manuscript on charge transport in semiconduction polymers is now published as rapid communication in Physical Review B. The study was a joint collaboration with University of Groningen.

Humboldt Research Group

Welcome to the Humboldt Research Group Website

Announcement:

We have also an opening for a master research project. You can check here for more details.

<p>Our recent work on the organic ferroelectric memories has been published now in Nature Communications: “Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes”, Nature Communications 8, Article number: 15741 (2017) ; doi:10.1038/ncomms15841.</p>
<p>In this collaborative work with Torricelli group (University of Brescia, Italy) and Blom group from MPIP we present a combined experimental, and theoretical study toward understanding of the device physics of organic ferroelectric diodes. Such diode are idea candidates for non-volatile flexible and low cost memory application, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress on down-scaling and technological implementation of high-density arrays requires a solid understanding of the device physics. In our work we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off where in the charge injection via tunneling process and subsequent charge accumulation govern the device operation. Our validated model provides design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 10<sup>12</sup> bit cm<sup>−2</sup>.</p> Zoom Image

Our recent work on the organic ferroelectric memories has been published now in Nature Communications: “Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes”, Nature Communications 8, Article number: 15741 (2017) ; doi:10.1038/ncomms15841.

In this collaborative work with Torricelli group (University of Brescia, Italy) and Blom group from MPIP we present a combined experimental, and theoretical study toward understanding of the device physics of organic ferroelectric diodes. Such diode are idea candidates for non-volatile flexible and low cost memory application, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress on down-scaling and technological implementation of high-density arrays requires a solid understanding of the device physics. In our work we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off where in the charge injection via tunneling process and subsequent charge accumulation govern the device operation. Our validated model provides design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 1012 bit cm−2.

Hamed Sharifi received the best poster award of the 13th International Conference on Organic Electronics (ICOE2017) that was held in Saint Petersburg, Russia. Congeratulations Hamed!
Hamed Sharifi received the best poster award of the 13th International Conference on Organic Electronics (ICOE2017) that was held in Saint Petersburg, Russia. Congeratulations Hamed!
 
loading content