Our recent work on the organic ferroelectric memories has been published now in Nature Communications: “Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes”, Nature Communications 8, Article number: 15741 (2017) ; doi:10.1038/ncomms15841.
In this collaborative work with Torricelli group (University of Brescia, Italy) and Blom group from MPI-P we present a combined experimental, and theoretical study toward understanding of the device physics of organic ferroelectric diodes. Such diode are idea candidates for non-volatile flexible and low cost memory application, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress on down-scaling and technological implementation of high-density arrays requires a solid understanding of the device physics. In our work we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off where in the charge injection via tunneling process and subsequent charge accumulation govern the device operation. Our validated model provides design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 1012 bit cm−2.