Publikationen von Ronald Ulbricht

Luu, T.; Linderälv, C.; Benedek, Z.; Ganyecz, Á.; Barcza, G.; Ivády, V.; Ulbricht, R.: Identifying high-energy electronic states of NV- centers in diamond. Applied Physics Letters 126 (23), 234001 (2025)

Alagna, N.; Dúzs, B.; Dietrich, V.; Younesi, A. T.; Lehmann, L.; Ulbricht, R.; Köppl, H.; Walther, A.; Gerber, S.: Deep Learning Reaction Framework (DLRN) for kinetic modeling of time-resolved data. Communications Chemistry 8 (1), 153 (2025)

Younesi, A. T.; Omar, M.; Wickenbrock, A.; Budker, D.; Ulbricht, R.: Towards high-sensitivity magnetometry with nitrogen-vacancy centers in diamond using the singlet infrared absorption. Physical Review Applied 23, 054019 (2025)

Carbery, W. P.; Farfan, C. A.; Ulbricht, R.; Turner, D. B.: The phonon-modulated Jahn–Teller distortion of the nitrogen vacancy center in diamond. Nature Communications 15 (1), 8646 (2024)

Luu, M. T.; Younesi, A. T.; Ulbricht, R.: Nitrogen-vacancy centers in diamond: discovery of additional electronic states. Materials for Quantum Technology 4 (3), 035201 (2024)

Dhungel, O.; Lenz, T.; Omar, M.; Rebeirro, J. S.; Luu, T.; Younesi, A. T.; Ulbricht, R.; Ivády, V.; Gali, A.; Wickenbrock, A. et al.; Budker, D.: Near zero-field microwave-free magnetometry with ensembles of nitrogen-vacancy centers in diamond. Physical Review B 109 (22), 224107 (2024)

Purz, T. L.; Hipsley, B. T.; Martin, E. W.; Ulbricht, R.; Cundiff, S. T.: Rapid multiplex ultrafast nonlinear microscopy for material characterization. Optics Express 30 (25), S. 45008 - 45019 (2022)

Younesi, A. T.; Ulbricht, R.: Broadband transient absorption spectroscopy using an incoherent white-light source as probe. Optics Express 30 (21), 467483, S. 38896 - 38906 (2022)

Day, M. W.; Bates, K. M.; Smallwood, C. L.; Owen, R. C.; Schröder, T.; Bielejec, E.; Ulbricht, R.; Cundiff, S. T.: Coherent Interactions between Silicon-Vacancy Centers in Diamond. Physical Review Letters 128 (20), 203603 (2022)

Bates, K. M.; Day, M. W.; Smallwood, C. L.; Owen, R. C.; Schröder, T.; Bielejec, E.; Ulbricht, R.; Cundiff, S. T.: Using silicon-vacancy centers in diamond to probe the full strain tensor. Journal of Applied Physics 130 (2), 024301 (2021)

Liu, A.; Cundiff, S. T.; Almeida, D. B.; Ulbricht, R.: Spectral broadening and ultrafast dynamics of a nitrogen-vacancy center ensemble in diamond. Materials for Quantum Technology 1 (2), 025002 (2021)

Smallwood, C. L.; Ulbricht, R.; Day, M. W.; Schröder, T.; Bates, K. M.; Autry, T. M.; Diederich, G.; Bielejec, E.; Siemens, M. E.; Cundiff, S. T.: Hidden Silicon-Vacancy Centers in Diamond. Physical Review Letters 126 (21), 213601 (2021)

Ulbricht, R.; Pijpers, J. J. H.; Groeneveld, E.; Koole, R.; Donega, C. D.; Vanmaekelbergh, D.; Delerue, C.; Allan, G.; Bonn, M.: Loosening Quantum Confinement: Observation of Real Conductivity Caused by Hole Polarons in Semiconductor Nanocrystals Smaller than the Bohr Radius. Nano Letters 12 (9), S. 4937 - 4942 (2012)

Day, M. W.; Bates, K. M.; Smallwood, C. L.; Owen, R. C.; Ulbricht, R.; Cundiff, a. S. T.: Dipole-Dipole Interactions Between Pairs of Silicon-Vacancy Centers in Diamond. In: 2021 Conference on Lasers and Electro-Optics (CLEO): proceedings: virtual conference, May 9-14, 2021: CLEO 2021, FTh4L.6. Conference on Lasers and Electro-Optics. CLEO: QELS_Fundamental Science 2021. From the session Nonlinear and THz Spectroscopy for Studying Quantum Materials (FTh4L), San Jose, California, United States , 09. Mai 2021 - 14. Mai 2021. IEEE, Piscataway, NJ (2021)

Bates, K.M.; Day, M.W.; Smallwood, C.L.; Ulbricht, R.; Autry, T.M.; Owen, R.C.; Diederich, G.; Schroder, T.; Bielejec, E.; Siemens, M.E. et al.; Cundiff, S.T.: Measuring the Diamond Strain Tensor with Silicon-Vacancy Centers. In: 2020 Conference on Lasers and Electro-Optics (CLEO): proceedings: San Jose, California, USA, 10-15 May 2020, Bd. 2020, 9192157. Conference on Lasers and Electro-Optics. CLEO: QELS_Fundamental Science 2020. From the session Single Color Centers in Wide-Bandgap Semiconductors (FTu3D), Washington, DC, United States, 10. Mai 2020 - 15. Mai 2020. IEEE, Piscataway, NJ (2020)