Publications of Klaas-Jan Tielrooij
All genres
Journal Article (5)
2021
Journal Article
33 (23), 2008614 (2021)
Thickness-Dependent Elastic Softening of Few-Layer Free-Standing MoSe2. Advanced Materials 2020
Journal Article
8 (3), 1900771 (2020)
Terahertz Nonlinear Optics of Graphene: From Saturable Absorption to High-Harmonics Generation. Advanced Optical Materials 2019
Journal Article
19 (12), pp. 9029 - 9036 (2019)
Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene. Nano Letters
Journal Article
123 (39), pp. 24031 - 24038 (2019)
Surface-Specific Spectroscopy of Water at a Potentiostatically Controlled Supported Graphene Monolayer. The Journal of Physical Chemistry C 2015
Journal Article
6, 7655 (2015)
Thermodynamic picture of ultrafast charge transport in graphene. Nature Communications Book Chapter (1)
2015
Book Chapter
Inherent Resistivity of Graphene to Strong THz Fields. In: Ultrafast Phenomena XIX, pp. 623 - 625 (Eds. Yamanouchi, I.; Cundiff, S.; de Vivie-Riedle, R.; Kuwata-Gonokami, M.; DiMauro, L.). Springer-Verlag, Berlin (2015)
Conference Paper (3)
2020
Conference Paper
Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene Measured with Terahertz Photoconductivity Measurements. In: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 9370419, p. 204. 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Virtual, Buffalo; United States, November 08, 2020 - November 13, 2020. IEEE Computer Society (2020)
2019
Conference Paper
2019, 8874288. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, September 01, 2019 - September 06, 2019. IEEE (2019)
Control of Terahertz Nonlinearity in Graphene by Gating. In: IEEE Xplore, Vol.
Conference Paper
2019, 8874148. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, September 01, 2019 - September 06, 2019. IEEE (2019)
Ionic permeability and interfacial doping of graphene on SiO2 measured with Terahertz photoconductivity measurement. In: IEEE Xplore, Vol.